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| MITSUBISHI SEMICONDUCTOR M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN transistors connected to from seven high current gain driver pairs. PIN CONFIGURATION IN1 IN2 IN3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 O1 O2 O3 O4 O5 O6 O7 COM COMMON OUTPUT FEATURES q High breakdown voltage (BVCEO 50V) q High-current driving (IC(max) = 500mA) q With clamping diodes q 3V micro computer series compatible input q Wide operating temperature range (Ta = -40 to +85C) INPUT IN4 IN5 IN6 IN7 GND APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. Package type 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM COM FUNCTION The M63824GP/KP is transistor-array of high active level seven units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05k is connected between the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin (pin9). All emitters of the output transistor are connected to GND (pin8). The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. OUTPUT 1.05K INPUT 7.2K 3K GND The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board Conditions Output, H Current per circuit output, L Ratings -0.5 ~ +50 500 -0.5 ~ +10 500 50 0.80(GP)/0.6(KP) -40 ~ +85 -55 ~ +125 Unit V mA V mA V W C C Feb.2003 MITSUBISHI SEMICONDUCTOR M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Parameter Output voltage Duty Cycle GP : no more than 4% KP : no more than 3% Duty Cycle GP : no more than 15% KP : no more than 12% IC 400mA Conditions Limits min 0 0 typ -- -- max 50 400 mA 0 2.4 0 -- -- -- 200 10 0.4 V V Unit V IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) VIH VIL "H" input voltage "L" input voltage ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter (Unless otherwise noted, Ta = 25C) Test conditions Limits min 50 -- -- -- -- -- -- 1000 typ -- 1.2 1.0 0.9 1.5 1.4 -- 2500 max -- 1.6 1.3 1.1 2.4 2.0 100 -- Unit V V mA V A -- ICEO = 100A II = 500A, IC = 350mA Collector-emitter saturation voltage II = 350A, IC = 200mA II = 250A, IC = 100mA Input current VI = 3V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 2V, IC = 350mA Collector-emitter breakdown voltage SWITCHING CHARACTERISTICS Symbol ton toff Parameter Turn-on time Turn-off time (Unless otherwise noted, Ta = 25C) Test conditions CL = 15pF (note 1) Limits min -- -- typ 15 350 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VO TIMING DIAGRAM 50% 50% Measured device OPEN PG 50 RL OUTPUT INPUT OUTPUT CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VI = 0 ~ 3V (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Feb.2003 MITSUBISHI SEMICONDUCTOR M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 1.0 500 M63824GP Clamping Diode Characteristics Forward bias current IF (mA) Power dissipation Pd (W) 0.8 400 0.6 M63824KP 300 0.4 0.416 0.312 200 Ta=25C Ta=85C Ta=-40C 0.2 100 0 0 25 50 75 85 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Forward bias voltage VF (V) Duty Cycle-Collector Characteristics (M63824GP) 500 500 Duty Cycle-Collector Characteristics (M63824GP) Collector current Ic (mA) 1 300 2 200 *The collector current values represent the current per circuit. *Repeated frequencyy 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C Collector current Ic (mA) 400 400 300 1 200 2 3 4 5 6 7 80 100 100 3 4 5 6 7 100 0 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 0 20 40 60 Duty cycle (%) Duty cycle (%) 500 Duty Cycle-Collector Characteristics (M63824KP) 500 Duty Cycle-Collector Characteristics (M63824KP) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously -operated circuit. *Ta = 85C Collector current Ic (mA) 1 300 2 200 *The collector current values represent the current per circuit. *Repeated frequencyy 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C Collector current Ic (mA) 400 400 300 1 200 2 34 56 7 0 20 40 60 80 100 100 3 4 5 6 7 100 0 0 20 40 60 80 100 0 Duty cycle (%) Duty cycle (%) Feb.2003 MITSUBISHI SEMICONDUCTOR M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE 100 Output Saturation Voltage-Collector Current Characteristics II=500A 500 Output Saturation Voltage-Collector Current Characteristics II=500A Collector current Ic (mA) 60 Ta=-40C Collector current Ic (mA) 80 400 300 40 Ta=25C 200 Ta=25C 20 Ta=85C 100 Ta=85C Ta=-40C 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) 104 DC Amplification Factor Collector Current Characteristics VCE=2V Ta=85C Grounded Emitter Transfer Characteristics 500 VCE=2V DC amplification factor hFE 7 5 3 2 Collector current Ic (mA) 400 300 103 7 5 3 2 Ta=-40C Ta=25C 200 Ta=85C Ta=25C Ta=-40C 100 102 101 2 3 5 7 102 2 3 5 7 103 0 0 0.4 0.8 1.2 1.6 2.0 Collector current IC (mA) Input voltage VI (V) Input Characteristics 4 Ta=25C Input current II (mA) 3 Ta=-40C 2 Ta=85C 1 0 0 1 2 3 4 5 Input voltage VI (V) Feb.2003 |
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